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  • MOSFET N-CH 200V 11.3A 8TDSON BSC12DN20NS3GATMA1
MOSFET N-CH 200V 11.3A 8TDSON BSC12DN20NS3GATMA1

MOSFET N-CH 200V 11.3A 8TDSON BSC12DN20NS3GATMA1

  • Product description: BSC12DN20NS3GATMA1 shenzhen chengsuchuang technology co.ltd.
  • INQUIRY
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 11.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 680pF @ 100V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 50W (Tc)
Rds On (Max) @ Id, Vgs 125 mOhm @ 5.7A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TDSON-8
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