Memory Chip MT41K512M8RH-125 V:E for Micron IC Stock,other chip is also provided,contact us to talk details,RFQ can be sent to E-mail:sales@chengsuchuang.com.
The MT41K512M8RH-125 V is a high-performance DRAM (Dynamic Random Access Memory) component from Micron Technology, part of their DDR3 SDRAM (Double Data Rate 3 Synchronous DRAM) lineup. This memory device is designed to meet the demanding needs of modern computing systems, offering a blend of speed, efficiency, and reliability, making it ideal for a wide range of applications, from consumer electronics to industrial and automotive systems.
Memory Density: 4Gb (Gigabit) capacity, organized as 512Mb x 8, providing ample space for data storage and processing in memory-intensive applications.
Speed: The device operates at a maximum clock speed of 1600 MHz, with a data rate of 1600 MT/s (Megatransfers per second), ensuring fast data access and high throughput.
Latency: Features a CAS (Column Address Strobe) latency of 11 cycles (CL11) at 1600 MHz, offering balanced performance for a variety of applications.
Voltage: Operates at a low voltage of 1.35V (VDD), with backward compatibility to 1.5V systems, which helps reduce power consumption while maintaining performance, making it ideal for power-sensitive applications.
Interface: DDR3 SDRAM interface with a 64ms, 8192-cycle refresh, ensuring reliable operation even in high-demand scenarios.
Package: Comes in a 78-ball FBGA (Fine-Pitch Ball Grid Array) package, which provides a compact form factor with excellent thermal performance and reliability, suitable for space-constrained designs.
The MT41K512M8RH-125 V
is suitable for a variety of applications, including:
Consumer Electronics: Smartphones, tablets, and other portable devices where high-speed memory is essential for smooth performance.
Computing: Laptops, desktops, and servers that require high-speed data access and reliable memory performance.
Networking: Routers, switches, and other networking equipment where quick data processing and low latency are crucial.
Industrial and Automotive: Embedded systems, industrial controllers, and automotive infotainment systems that demand robust and efficient memory solutions.
Error Correction: Although this device itself doesn’t include ECC (Error-Correcting Code), it can be used in systems where data integrity is critical, often paired with ECC-enabled memory controllers.
Operating Temperature: Designed to operate within a standard temperature range, making it suitable for use in a wide variety of environmental conditions.
The MT41K512M8RH-125 V
DDR3 SDRAM module is a versatile and reliable memory solution, offering a combination of high speed, low power consumption, and robust performance. Whether it's used in consumer electronics, computing systems, networking devices, or industrial applications, this memory component is engineered to deliver consistent and efficient performance, making it a trusted choice for system designers and engineers.